Electronic Properties of Grain Boundaries in Polycrystalline Silicon

Electronic Properties of Grain Boundaries in Polycrystalline Silicon

Research output: Contribution to conference › Paper

Original language	American English
Pages	59-64
Number of pages	6
State	Published - 1983
Event	Laser Processing of Semiconductor Devices - Los Angeles, California Duration: 18 Jan 1983 → 19 Jan 1983

Conference

Conference	Laser Processing of Semiconductor Devices
City	Los Angeles, California
Period	18/01/83 → 19/01/83

Bibliographical note

Work performed by Department of Electrical Engineering, Columbia University, New York, New York

NREL Publication Number

ACNR/CP-4078

Cite this

@conference{1c9ae1d5db05405b9a27d71d1368b4c8,

title = "Electronic Properties of Grain Boundaries in Polycrystalline Silicon",

author = "NREL",

note = "Work performed by Department of Electrical Engineering, Columbia University, New York, New York; Laser Processing of Semiconductor Devices ; Conference date: 18-01-1983 Through 19-01-1983",

year = "1983",

language = "American English",

pages = "59--64",

}