Electronic Properties of Improved Amorphous Silicon-Germanium Alloys Deposited by a Low Temperature Hot Wire Chemical Vapor Deposition Process

Electronic Properties of Improved Amorphous Silicon-Germanium Alloys Deposited by a Low Temperature Hot Wire Chemical Vapor Deposition Process

Research output: Contribution to conference › Paper

Original language	American English
Pages	49-54
Number of pages	6
State	Published - 2005
Event	Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium - San Francisco, California Duration: 28 Mar 2005 → 1 Apr 2005

Conference

Conference	Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium
City	San Francisco, California
Period	28/03/05 → 1/04/05

NREL Publication Number

NREL/CP-520-39692

Cite this

@conference{451a4dd9ad3c45028e7946f9560ab6ef,

title = "Electronic Properties of Improved Amorphous Silicon-Germanium Alloys Deposited by a Low Temperature Hot Wire Chemical Vapor Deposition Process",

author = "NREL",

year = "2005",

language = "American English",

pages = "49--54",

note = "Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium ; Conference date: 28-03-2005 Through 01-04-2005",

}

TY - CONF

T1 - Electronic Properties of Improved Amorphous Silicon-Germanium Alloys Deposited by a Low Temperature Hot Wire Chemical Vapor Deposition Process

AU - NREL, null

PY - 2005

Y1 - 2005

M3 - Paper

SP - 49

EP - 54

T2 - Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium

Y2 - 28 March 2005 through 1 April 2005

ER -