Electronic Properties of Metal-Semiconductor and Metal-Oxide-Semiconductor Structures Composed of Carbon Nanotube Film on Silicon: Article No. 233105

doi:10.1063/1.3524194

Electronic Properties of Metal-Semiconductor and Metal-Oxide-Semiconductor Structures Composed of Carbon Nanotube Film on Silicon: Article No. 233105

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	23
DOIs	https://doi.org/10.1063/1.3524194
State	Published - 2010

NREL Publication Number

NREL/JA-5900-50529

Keywords

carbon nanotube
metal-oxide semiconductor
silicon

Access to Document

10.1063/1.3524194

Cite this

@article{263200b72ba149f0831663079db40060,

title = "Electronic Properties of Metal-Semiconductor and Metal-Oxide-Semiconductor Structures Composed of Carbon Nanotube Film on Silicon: Article No. 233105",

keywords = "carbon nanotube, metal-oxide semiconductor, silicon",

author = "NREL",

year = "2010",

doi = "10.1063/1.3524194",

language = "American English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Electronic Properties of Metal-Semiconductor and Metal-Oxide-Semiconductor Structures Composed of Carbon Nanotube Film on Silicon

T2 - Article No. 233105

AU - NREL, null

PY - 2010

Y1 - 2010

KW - carbon nanotube

KW - metal-oxide semiconductor

KW - silicon

U2 - 10.1063/1.3524194

DO - 10.1063/1.3524194

M3 - Article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -