Electronic States at the Hydrogenated Amorphous Silicon/Silicon Nitride Interface

Research output: Contribution to journal › Article

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NREL Publication Number

@article{6a182d4f5b9d47c8889712c66956dfac,

title = "Electronic States at the Hydrogenated Amorphous Silicon/Silicon Nitride Interface",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California",

year = "1984",

doi = "10.1063/1.95398",

language = "American English",

volume = "45",

pages = "769--771",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Electronic States at the Hydrogenated Amorphous Silicon/Silicon Nitride Interface

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1984

Y1 - 1984

U2 - 10.1063/1.95398

DO - 10.1063/1.95398

M3 - Article

SN - 0003-6951

VL - 45

SP - 769

EP - 771

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -