Electronic States in the Gap of Amorphous Silicon-Germanium Alloys

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	1011-1014
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	97&98, Part II
DOIs	https://doi.org/10.1016/0022-3093(87)90243-2
State	Published - 1987

Work performed by Xerox Palo Alto Research Center, Palo Alto, California,

NREL Publication Number

@article{8873cdfa46e046c4a3df94ac1b8b1231,

title = "Electronic States in the Gap of Amorphous Silicon-Germanium Alloys",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California,",

year = "1987",

doi = "10.1016/0022-3093(87)90243-2",

language = "American English",

volume = "97\&98, Part II",

pages = "1011--1014",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Electronic States in the Gap of Amorphous Silicon-Germanium Alloys

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California,

PY - 1987

Y1 - 1987

U2 - 10.1016/0022-3093(87)90243-2

DO - 10.1016/0022-3093(87)90243-2

M3 - Article

SN - 0022-3093

VL - 97&98, Part II

SP - 1011

EP - 1014

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -