Electronic Structure Consequences of In/Ga Composition Variations in Self-Assembled InxGa1-xAs/GaAs Alloy Quantum Dots (Article No. 125302)

doi:10.1103/PhysRevB.64.125302

Electronic Structure Consequences of In/Ga Composition Variations in Self-Assembled InxGa1-xAs/GaAs Alloy Quantum Dots (Article No. 125302)

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	12
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.64.125302
State	Published - 2001

NREL Publication Number

NREL/JA-590-31815

Access to Document

10.1103/PhysRevB.64.125302

Cite this

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title = "Electronic Structure Consequences of In/Ga Composition Variations in Self-Assembled InxGa1-xAs/GaAs Alloy Quantum Dots (Article No. 125302)",

author = "NREL",

year = "2001",

doi = "10.1103/PhysRevB.64.125302",

language = "American English",

volume = "64",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "12",

}

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T1 - Electronic Structure Consequences of In/Ga Composition Variations in Self-Assembled InxGa1-xAs/GaAs Alloy Quantum Dots (Article No. 125302)

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PY - 2001

Y1 - 2001

U2 - 10.1103/PhysRevB.64.125302

DO - 10.1103/PhysRevB.64.125302

M3 - Article

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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