Electronic Structure Near the Band Gap of Heavily Nitrogen Doped GaAs and GaP

Electronic Structure Near the Band Gap of Heavily Nitrogen Doped GaAs and GaP

NREL

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Original language	American English
Pages	49-60
Number of pages	12
State	Published - 2002
Event	Progress in Semiconductor Materials for Optoelectronic Applications: Materials Research Society Symposium - Boston, Massachusetts Duration: 26 Nov 2001 → 29 Nov 2001

Conference

Conference	Progress in Semiconductor Materials for Optoelectronic Applications: Materials Research Society Symposium
City	Boston, Massachusetts
Period	26/11/01 → 29/11/01

NLR Publication Number

NREL/CP-590-33419

Cite this

@conference{ad919b1e42114c8db940017985c0616c,

title = "Electronic Structure Near the Band Gap of Heavily Nitrogen Doped GaAs and GaP",

author = "NREL",

year = "2002",

language = "American English",

pages = "49--60",

note = "Progress in Semiconductor Materials for Optoelectronic Applications: Materials Research Society Symposium ; Conference date: 26-11-2001 Through 29-11-2001",

}