Electronic Structure of Nitrogen Doped GaAs and GaP

Research output: Contribution to conferencePaper

Original languageAmerican English
Pages219-237
Number of pages19
StatePublished - 2002
EventGallium-Nitride-Based Technologies: a Conference - San Jose, California
Duration: 21 Jan 200222 Jan 2002

Conference

ConferenceGallium-Nitride-Based Technologies: a Conference
CitySan Jose, California
Period21/01/0222/01/02

NREL Publication Number

  • NREL/CP-590-35495

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