Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior: Article No. 044008

Ji-Sang Park; W.?H. Han; Young Oh; K.?J. Chan

doi:10.1103/PhysRevApplied.3.044008

Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior: Article No. 044008

Ji-Sang Park, W.?H. Han, Young Oh, K.?J. Chan

Materials Science

Korea Advanced Institute of Science & Technology

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	8
Journal	Physical Review Applied
Volume	3
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevApplied.3.044008
State	Published - 2015

NREL Publication Number

NREL/JA-5K00-64431

Access to Document

10.1103/PhysRevApplied.3.044008

Cite this

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title = "Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior: Article No. 044008",

author = "Ji-Sang Park and W.?H. Han and Young Oh and K.?J. Chan",

year = "2015",

doi = "10.1103/PhysRevApplied.3.044008",

language = "American English",

volume = "3",

journal = "Physical Review Applied",

issn = "2331-7019",

publisher = "American Physical Society",

number = "4",

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AU - Park, Ji-Sang

AU - Han, W.?H.

AU - Oh, Young

AU - Chan, K.?J.

PY - 2015

Y1 - 2015

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DO - 10.1103/PhysRevApplied.3.044008

M3 - Article

SN - 2331-7019

VL - 3

JO - Physical Review Applied

JF - Physical Review Applied

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