Electronic Structure of Silicon Nitride and Amorphous Silicon/Silicon Nitride Band Offsets by Electron Spectroscopy

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)2947-2954
    Number of pages8
    JournalJournal of Applied Physics
    Issue number8, Part I
    StatePublished - 1987

    Bibliographical note

    Work performed by Department of Materials Science and Engineering, Stanford University, Stanford, California; Xerox Palo Alto Research Center, Palo Alto, California; and Departments of Materials Science and Engineering, and Electrical Engineering, Stanford University, Stanford, California

    NREL Publication Number

    • ACNR/JA-10676

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