Electronic Structure of the Zn(O,S)/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface

Rebekah Garris; Lorelle Mansfield; Kannan Ramanathan; Michelle Mezher; Kimberly Horsley; Lothar Weinhardt; Douglas Duncan; Monika Blum; Samantha Rosenberg; Marcus Bar; Clemens Heske

doi:10.1002/pip.2764

Electronic Structure of the Zn(O,S)/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface

Rebekah Garris, Lorelle Mansfield, Kannan Ramanathan, Michelle Mezher, Kimberly Horsley, Lothar Weinhardt, Douglas Duncan, Monika Blum, Samantha Rosenberg, Marcus Bar, Clemens Heske

Materials Science

Research output: Contribution to journal › Article › peer-review

30 Scopus Citations

Abstract

The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se₂ interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se₂ system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 ± 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)₂, and possibly ZnSe.

Original language	American English
Pages (from-to)	1142-1148
Number of pages	7
Journal	Progress in Photovoltaics: Research and Applications
Volume	24
Issue number	8
DOIs	https://doi.org/10.1002/pip.2764 https://doi.org/10.1002/pip.2764
State	Published - 2016

Bibliographical note

Publisher Copyright:
Copyright © 2016 John Wiley & Sons, Ltd.

NREL Publication Number

NREL/JA-5K00-66194

Keywords

alternative buffer layers
band alignment
chalcopyrite thin-film solar cell
inverse photoemission
X-ray spectroscopy
Zn(O,S)

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title = "Electronic Structure of the Zn(O,S)/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface",

abstract = "The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se2 system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 ± 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)2, and possibly ZnSe.",

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author = "Rebekah Garris and Lorelle Mansfield and Kannan Ramanathan and Michelle Mezher and Kimberly Horsley and Lothar Weinhardt and Douglas Duncan and Monika Blum and Samantha Rosenberg and Marcus Bar and Clemens Heske",

note = "Publisher Copyright: Copyright {\textcopyright} 2016 John Wiley & Sons, Ltd.",

year = "2016",

doi = "10.1002/pip.2764",

language = "American English",

volume = "24",

pages = "1142--1148",

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T1 - Electronic Structure of the Zn(O,S)/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface

AU - Garris, Rebekah

AU - Mansfield, Lorelle

AU - Ramanathan, Kannan

AU - Mezher, Michelle

AU - Horsley, Kimberly

AU - Weinhardt, Lothar

AU - Duncan, Douglas

AU - Blum, Monika

AU - Rosenberg, Samantha

AU - Bar, Marcus

AU - Heske, Clemens

PY - 2016

Y1 - 2016

N2 - The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se2 system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 ± 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)2, and possibly ZnSe.

AB - The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se2 system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 ± 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)2, and possibly ZnSe.

KW - alternative buffer layers

KW - band alignment

KW - chalcopyrite thin-film solar cell

KW - inverse photoemission

KW - X-ray spectroscopy

KW - Zn(O,S)

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DO - 10.1002/pip.2764

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SN - 1062-7995

VL - 24

SP - 1142

EP - 1148

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 8

ER -

Electronic Structure of the Zn(O,S)/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface

Abstract

Bibliographical note

NREL Publication Number

Keywords

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