Electronic Structure of the Zn(O,S)/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface

Rebekah Garris, Lorelle Mansfield, Kannan Ramanathan, Michelle Mezher, Kimberly Horsley, Lothar Weinhardt, Douglas Duncan, Monika Blum, Samantha Rosenberg, Marcus Bar, Clemens Heske

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30 Scopus Citations


The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se2 system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 ± 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)2, and possibly ZnSe.

Original languageAmerican English
Pages (from-to)1142-1148
Number of pages7
JournalProgress in Photovoltaics: Research and Applications
Issue number8
StatePublished - 2016

Bibliographical note

Publisher Copyright:
Copyright © 2016 John Wiley & Sons, Ltd.

NREL Publication Number

  • NREL/JA-5K00-66194


  • alternative buffer layers
  • band alignment
  • chalcopyrite thin-film solar cell
  • inverse photoemission
  • X-ray spectroscopy
  • Zn(O,S)


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