Electroplated CuInS2 and CuInSe2 Layers: Preparation and Physical and Photovoltaic Characterization

Gary Hodes, Tina Engelhard, David Cahen, Lawrence L. Kazmerski, Charles R. Herrington

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95 Scopus Citations


CuInS2 films prepared by electrodeposition from an aqueous solution of Cu+ and In3+ ions and thiourea, with subsequent annealing in an H2S atmosphere, were characterized by photoelectrochemical measurements in a polysulfide electrolyte and by scanning electron microscopy and microprobe analyses. Laser scanning of the photocurrent together with microprobe analyses correlated n- and p-type behavior with indium-rich and copper-rich areas respectively. For n-type layers, performance appeared to be determined largely by the morphology of the layers. CuInS2 layers were also prepared by electrodeposition of a CuIn alloy and subsequent sulfurization in H2S. The above methods were extended to the preparation of CuIn5S8 (by adjustment of the copper-to-indium ratio in the bath) and CuInSe2 (by heating CuIn films in H2Se).

Original languageAmerican English
Pages (from-to)93-106
Number of pages14
JournalThin Solid Films
Issue number1-2
StatePublished - 1985

Bibliographical note

Work performed by Department of Materials Research, Weizmann Institute of Science, Rehovot, Israel, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

  • ACNR/JA-213-7440


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