Electroreflectance Measurements of Electric Fields in Ordered GaInP2

J. D. Perkins, Y. Zhang, J. F. Geisz, W. E. McMahon, J. M. Olson, A. Mascarenhas

Research output: Contribution to journalArticlepeer-review

8 Scopus Citations


Ordered Ga0.52In0.48P alloys (GaInP2 for simplicity) grown on miscut [001] GaAs resemble monolayer superlattices with alternating Ga- and In-rich layers along either the [111] or [111] directions. Recent calculations suggest that, in fully ordered GaInP2, an intrinsic ordering-induced electric field of order 1600 kV/cm should exist. In partially ordered samples, as can actually be grown, the expected field is reduced to 400 kV/cm. For such a strong internal electric field, clear Franz-Keldysh Oscillations (FKOs) would be expected in an electroreflectance measurement. We report electroreflectance measurements of ordered GaInP2 layers measured at T=100 K. For all samples measured, no FKOs are observed in the absence of an additional external dc bias voltage. At the lowest bias voltages for which FKOs are seen, the internal electric field in the GaInP2 layer, determined from the FKOs, is ∼60 kV/cm along the [001] direction corresponding to ∼100 kV/cm along the ordering direction. Hence, we conclude that, at least in the organometallic vapor phase epitaxy grown samples studied here, any net macroscopic internal electric field in the GaInP2 layer is less than ∼100 kV/cm along the ordering direction.

Original languageAmerican English
Pages (from-to)4502-4508
Number of pages7
JournalJournal of Applied Physics
Issue number8
StatePublished - 1998

NREL Publication Number

  • NREL/JA-590-26080


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