Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices

Ramchandra Kotecha, Andriy Zakutayev, Wyatt Metzger, Paul Paret, Gilberto Moreno, Bidzina Kekelia, Kevin Bennion, Barry Mather, Sreekant Narumanchi, Samuel Graham, Samuel Kim

Research output: Contribution to conferencePaperpeer-review

5 Scopus Citations

Abstract

Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device’s behavior and its static and dynamic characteristics. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.

Conference

ConferenceASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019
Country/TerritoryUnited States
CityAnaheim
Period7/10/199/10/19

Bibliographical note

See NREL/CP-5400-73791 for preprint

NREL Publication Number

  • NREL/CP-5400-76109

Keywords

  • Gallium Oxide Devices
  • High-Voltage Devices
  • Power Electronics
  • Power Semiconductor Devices
  • Ultra
  • Wide Band-Gap
  • Wide Band-Gap Devices

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