Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint

Ramchandra Kotecha; Bidzina Kekelia; Gilberto Moreno; Paul Paret; Wyatt Metzger; Barry Mather; Kevin Bennion; Sreekant Narumanchi; Andriy Zakutayev; Samuel Graham; Samuel Kim

Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint

Ramchandra Kotecha, Bidzina Kekelia, Gilberto Moreno, Paul Paret, Wyatt Metzger, Barry Mather, Kevin Bennion, Sreekant Narumanchi, Andriy Zakutayev, Samuel Graham, Samuel Kim

Georgia Institute of Technology

Research output: Contribution to conference › Paper

Abstract

Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.

Original language	American English
Number of pages	7
State	Published - 2019
Event	ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (IPACK2019) - Anaheim, California Duration: 7 Oct 2019 → 9 Oct 2019

Conference

Conference	ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (IPACK2019)
City	Anaheim, California
Period	7/10/19 → 9/10/19

Bibliographical note

See NREL/CP-5400-76109 for paper as published in ASME proceedings

NREL Publication Number

NREL/CP-5400-73791

Keywords

gallium oxide devices
high-voltage devices
power electronics
power semiconductor devices
ultra
wide band-gap
wide band-gap devices

Access to Document

https://www.nrel.gov/docs/fy20osti/73791.pdf

Cite this

Kotecha, R., Kekelia, B., Moreno, G., Paret, P., Metzger, W., Mather, B., Bennion, K., Narumanchi, S., Zakutayev, A., Graham, S., & Kim, S. (2019). Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint. Paper presented at ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (IPACK2019), Anaheim, California. https://www.nrel.gov/docs/fy20osti/73791.pdf

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title = "Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint",

abstract = "Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.",

keywords = "gallium oxide devices, high-voltage devices, power electronics, power semiconductor devices, ultra, wide band-gap, wide band-gap devices",

author = "Ramchandra Kotecha and Bidzina Kekelia and Gilberto Moreno and Paul Paret and Wyatt Metzger and Barry Mather and Kevin Bennion and Sreekant Narumanchi and Andriy Zakutayev and Samuel Graham and Samuel Kim",

note = "See NREL/CP-5400-76109 for paper as published in ASME proceedings; ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (IPACK2019) ; Conference date: 07-10-2019 Through 09-10-2019",

year = "2019",

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Kotecha, R, Kekelia, B , Moreno, G , Paret, P, Metzger, W, Mather, B, Bennion, K, Narumanchi, S , Zakutayev, A, Graham, S & Kim, S 2019, 'Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint', Paper presented at ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (IPACK2019), Anaheim, California, 7/10/19 - 9/10/19. <https://www.nrel.gov/docs/fy20osti/73791.pdf>

Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint. / Kotecha, Ramchandra; Kekelia, Bidzina ; Moreno, Gilberto et al.
2019. Paper presented at ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (IPACK2019), Anaheim, California.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint

AU - Kotecha, Ramchandra

AU - Kekelia, Bidzina

AU - Moreno, Gilberto

AU - Paret, Paul

AU - Metzger, Wyatt

AU - Mather, Barry

AU - Bennion, Kevin

AU - Narumanchi, Sreekant

AU - Zakutayev, Andriy

AU - Graham, Samuel

AU - Kim, Samuel

N1 - See NREL/CP-5400-76109 for paper as published in ASME proceedings

PY - 2019

Y1 - 2019

N2 - Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.

AB - Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.

KW - gallium oxide devices

KW - high-voltage devices

KW - power electronics

KW - power semiconductor devices

KW - ultra

KW - wide band-gap

KW - wide band-gap devices

M3 - Paper

T2 - ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (IPACK2019)

Y2 - 7 October 2019 through 9 October 2019

ER -

Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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Cite this