Elements of Doping Engineering in Semiconductors

Research output: Contribution to conferencePaper


Using defect thermodynamics, we discuss physical factors that a_ect doping limits in semiconductors. The dependencies of the defect formation enthalpy on the atomic chemical potentials and on the electron Fermi energy are demonstrated. These dependencies, in particular on the Fermi energy, lead to spontaneous formation of charge-compensating defects that can limit doping. Experimental datacompiled for III-V, II-VI, and I-III-VI2 compounds support this view and further provide insight into the connections among di_erent host materials. We argue that what matters is not the magnitude of the band gap that determines the dopability of a material, but rather, the relative position of the conduction-band minimum (in the case of n-doping) and the valence-band maximum (in the case ofp-doping) with respect to vacuum.;
Original languageAmerican English
Number of pages10
StatePublished - 1998
EventNCPV Program Review Meeting - Denver, Colorado
Duration: 8 Sep 199811 Sep 1998


ConferenceNCPV Program Review Meeting
CityDenver, Colorado

NREL Publication Number

  • NREL/CP-590-25746


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