Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

Peter Hacke; Sergiu Spataru; Steve Johnston; Kent Terwilliger; Kaitlyn Vansant; Michael Kempe; John Wohlgemuth; Sarah Kurtz; Anders Olsson; Michelle Propst

doi:10.1109/JPHOTOV.2016.2598269

Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

Peter Hacke, Sergiu Spataru, Steve Johnston, Kent Terwilliger, Kaitlyn Vansant, Michael Kempe, John Wohlgemuth, Sarah Kurtz, Anders Olsson, Michelle Propst

Materials Science

Research output: Contribution to journal › Article › peer-review

29 Scopus Citations

Abstract

A progression of potential-induced degradation (PID) mechanisms is observed in CdTe modules, which are dependent on the stress level and moisture ingress. This includes shunting, junction degradation, and two different manifestations of series resistance. The dark I-V method for in situ characterization of P_max based on superposition was adapted for the thin-film modules undergoing PID in view of the degradation mechanisms observed. An exponential model based on module temperature and relative humidity (RH) was fit to the PID rate for multiple stress levels in chamber tests and validated by predicting the observed degradation of the module type in the field.

Original language	American English
Article number	7548311
Pages (from-to)	1635-1640
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	6
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2016.2598269 https://doi.org/10.1109/JPHOTOV.2016.2598269
State	Published - Nov 2016

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

NREL Publication Number

NREL/JA-5J00-65810

Keywords

CdTe
degradation modeling
high voltage
potential-induced degradation (PID)
thin-film modules

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Hacke, P., Spataru, S., Johnston, S., Terwilliger, K., Vansant, K., Kempe, M., Wohlgemuth, J., Kurtz, S., Olsson, A., & Propst, M. (2016). Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules. IEEE Journal of Photovoltaics, 6(6), 1635-1640. Article 7548311. https://doi.org/10.1109/JPHOTOV.2016.2598269, https://doi.org/10.1109/JPHOTOV.2016.2598269

@article{e1523c28bf2d4c5da7160815a5adb16f,

title = "Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules",

abstract = "A progression of potential-induced degradation (PID) mechanisms is observed in CdTe modules, which are dependent on the stress level and moisture ingress. This includes shunting, junction degradation, and two different manifestations of series resistance. The dark I-V method for in situ characterization of Pmax based on superposition was adapted for the thin-film modules undergoing PID in view of the degradation mechanisms observed. An exponential model based on module temperature and relative humidity (RH) was fit to the PID rate for multiple stress levels in chamber tests and validated by predicting the observed degradation of the module type in the field.",

keywords = "CdTe, degradation modeling, high voltage, potential-induced degradation (PID), thin-film modules",

author = "Peter Hacke and Sergiu Spataru and Steve Johnston and Kent Terwilliger and Kaitlyn Vansant and Michael Kempe and John Wohlgemuth and Sarah Kurtz and Anders Olsson and Michelle Propst",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2016",

month = nov,

doi = "10.1109/JPHOTOV.2016.2598269",

language = "American English",

volume = "6",

pages = "1635--1640",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

number = "6",

}

Hacke, P, Spataru, S, Johnston, S , Terwilliger, K , Vansant, K , Kempe, M, Wohlgemuth, J, Kurtz, S, Olsson, A & Propst, M 2016, 'Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules', IEEE Journal of Photovoltaics, vol. 6, no. 6, 7548311, pp. 1635-1640. https://doi.org/10.1109/JPHOTOV.2016.2598269, https://doi.org/10.1109/JPHOTOV.2016.2598269

TY - JOUR

T1 - Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

AU - Hacke, Peter

AU - Spataru, Sergiu

AU - Johnston, Steve

AU - Terwilliger, Kent

AU - Vansant, Kaitlyn

AU - Kempe, Michael

AU - Wohlgemuth, John

AU - Kurtz, Sarah

AU - Olsson, Anders

AU - Propst, Michelle

PY - 2016/11

Y1 - 2016/11

N2 - A progression of potential-induced degradation (PID) mechanisms is observed in CdTe modules, which are dependent on the stress level and moisture ingress. This includes shunting, junction degradation, and two different manifestations of series resistance. The dark I-V method for in situ characterization of Pmax based on superposition was adapted for the thin-film modules undergoing PID in view of the degradation mechanisms observed. An exponential model based on module temperature and relative humidity (RH) was fit to the PID rate for multiple stress levels in chamber tests and validated by predicting the observed degradation of the module type in the field.

AB - A progression of potential-induced degradation (PID) mechanisms is observed in CdTe modules, which are dependent on the stress level and moisture ingress. This includes shunting, junction degradation, and two different manifestations of series resistance. The dark I-V method for in situ characterization of Pmax based on superposition was adapted for the thin-film modules undergoing PID in view of the degradation mechanisms observed. An exponential model based on module temperature and relative humidity (RH) was fit to the PID rate for multiple stress levels in chamber tests and validated by predicting the observed degradation of the module type in the field.

KW - CdTe

KW - degradation modeling

KW - high voltage

KW - potential-induced degradation (PID)

KW - thin-film modules

UR - http://www.scopus.com/inward/record.url?scp=84994787763&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2016.2598269

DO - 10.1109/JPHOTOV.2016.2598269

M3 - Article

AN - SCOPUS:84994787763

SN - 2156-3381

VL - 6

SP - 1635

EP - 1640

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

M1 - 7548311

ER -

Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

Abstract

Bibliographical note

NREL Publication Number

Keywords

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