Emission Limited Filling of Deep Defects in Transient Capacitance Experiments

    Research output: Contribution to journalArticle


    The dependence of capacitance transients on the filling pulse length for a number of amorphous silicon Schottky devices grown with different back contact configuations were measured. If the depletion layers are only partially filled by partial voltage pulsing, anomalous capacitance transients can be observed on all samples regardless of the back contact or position of the Fermi level. Sampleswithout an Ohmic back contact show a slowly rising capacitance transient during the defect filling phase. It is proposed that the defect filling on these samples is time-limited by emission either from the Fermi level in the bulk of the samples, or by emission over a barrier at the back contact. This proposal suggests that the anomalous capacitance emission transients for such samples are due topartial filling of the depletion layer, rather than to slow relaxation of defects upon charge capture.
    Original languageAmerican English
    Pages (from-to)525-529
    Number of pages5
    JournalJournal of Non-Crystalline Solids
    StatePublished - 1996

    NREL Publication Number

    • NREL/JA-21650


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