Emitter Choice for Epitaxial CdTe Solar Cells

Tao Song, James Sites, Ana Kanevce

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations

Abstract

High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV ≤ ΔEc ≤ 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (ΔEc ≥ 0.4 eV) can impede the photo current and lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ∼30% Mg) and MgZnO (with ∼ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.

Original languageAmerican English
Pages1968-1971
Number of pages4
DOIs
StatePublished - 18 Nov 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 5 Jun 201610 Jun 2016

Conference

Conference43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/TerritoryUnited States
CityPortland
Period5/06/1610/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

  • NREL/CP-5K00-67984

Keywords

  • CdTe
  • emitter
  • heterojunction
  • solar cells

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