Emitter Reconstruction for Cleaved CdSexTe1-x Devices with Cu vs. As Doping

Research output: NRELPresentation

Abstract

CdTe absorbers have had historically low carrier densities of ~10^14 cm-3 due to the self-compensating nature of copper dopants. Recent advances in group-V (e.g., arsenic) doping have increased this to 10^16-10^17 cm-3, but modeling suggests that the front interface and emitter properties become limiting in this case. By cleaving arsenic- and copper-doped CdTe device stacks at the emitter/absorber interface, we gain the ability to reconstruct emitters with known properties, which will not change during subsequent device processing, and directly test the modeling. By doing so, we find a much larger performance drop in arsenic devices; this is attributed to insufficient electron density in the emitter and increased sensitivity to interface changes due to collapsed depletion width. This work can help guide emitter engineering for highly-doped CdTe devices in both the as-grown-superstrate- and cleaved-substrate configurations.
Original languageAmerican English
Number of pages16
StatePublished - 2021

Publication series

NamePresented at the 48th IEEE Photovoltaic Specialists Conference (PVSC 48), 20-25 June 2021

NREL Publication Number

  • NREL/PR-5K00-80267

Keywords

  • As-doped
  • CdSeTe
  • Gr-V
  • substrate

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