Abstract
Growth of III-V materials on Si could enable dramatic cost reduction for III-V PV by eliminating the need for expensive III-V substrates and enabling high-efficiency tandem solar cells. The direct heteroepitaxy of III-V materials on Si for high-efficiency photovoltaics has progressed greatly in recent years, but most studies have focused on off-cut wafers polished using an expensive chemical-mechanical planarization process (which is not used for commercial solar cells). Alternative growth approaches are needed that can enable the integration of high material quality III-Vs with PV-grade Si materials. Here we demonstrate the use of cost-effective patterning and etching approaches to create templates for selective area epitaxy on PV-grade Si substrates. We investigate the nucleation of III-V materials on these substrates.
Original language | American English |
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Pages | 268-270 |
Number of pages | 3 |
DOIs | |
State | Published - 26 Nov 2018 |
Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018 |
Conference
Conference | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
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Country/Territory | United States |
City | Waikoloa Village |
Period | 10/06/18 → 15/06/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
NREL Publication Number
- NREL/CP-5900-70839
Keywords
- GaAs
- nanoimprint lithography
- photoelectrochemistry
- selective area growth
- Si