Enabling Low-Cost III-V/Si Integration Through Nucleation of GaP on v-Grooved Si Substrates

Emily Warren, Theresa Saenz, Anica Neumann, Kelsey Horowitz, Andrew Norman, Adele Tamboli, Jeramy Zimmerman, William McMahon, Emily Makoutz, Amanda Matheson

Research output: Contribution to conferencePaperpeer-review

5 Scopus Citations

Abstract

Growth of III-V materials on Si could enable dramatic cost reduction for III-V PV by eliminating the need for expensive III-V substrates and enabling high-efficiency tandem solar cells. The direct heteroepitaxy of III-V materials on Si for high-efficiency photovoltaics has progressed greatly in recent years, but most studies have focused on off-cut wafers polished using an expensive chemical-mechanical planarization process (which is not used for commercial solar cells). Alternative growth approaches are needed that can enable the integration of high material quality III-Vs with PV-grade Si materials. Here we demonstrate the use of cost-effective patterning and etching approaches to create templates for selective area epitaxy on PV-grade Si substrates. We investigate the nucleation of III-V materials on these substrates.

Original languageAmerican English
Pages268-270
Number of pages3
DOIs
StatePublished - 26 Nov 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/TerritoryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NREL Publication Number

  • NREL/CP-5900-70839

Keywords

  • GaAs
  • nanoimprint lithography
  • photoelectrochemistry
  • selective area growth
  • Si

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