Abstract
III-V materials provide the highest efficiencies, but the higher cost of these materials compared to other alternatives such as silicon has limited their applications. One way of reducing the costs is by minimizing the amount of material needed. In this work, using optical simulations we test light trapping layers in the front and in the back of a GaAs single junction solar cell. By using these layers, we predict that we can obtain near optically thick GaAs single junctions with only 300 nm active material, with maximum calculated Jsc of 28.7 mA/cm2 under the radiative limit.
Original language | American English |
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Pages | 1-3 |
Number of pages | 3 |
DOIs | |
State | Published - Jun 2019 |
Event | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 |
Conference
Conference | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 |
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Country/Territory | United States |
City | Chicago |
Period | 16/06/19 → 21/06/19 |
Bibliographical note
Publisher Copyright:© 2019 IEEE.
NREL Publication Number
- NREL/CP-5900-74043
Keywords
- III-V
- light trapping
- photonic crystals