Enabling Ultrathin III-V Solar Cells Using Dual Photonic Crystals

Jeronimo Buencuerpo Farina, John Geisz, Myles Steiner, Adele Tamboli

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations


III-V materials provide the highest efficiencies, but the higher cost of these materials compared to other alternatives such as silicon has limited their applications. One way of reducing the costs is by minimizing the amount of material needed. In this work, using optical simulations we test light trapping layers in the front and in the back of a GaAs single junction solar cell. By using these layers, we predict that we can obtain near optically thick GaAs single junctions with only 300 nm active material, with maximum calculated Jsc of 28.7 mA/cm2 under the radiative limit.

Original languageAmerican English
Number of pages3
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019


Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

  • NREL/CP-5900-74043


  • III-V
  • light trapping
  • photonic crystals


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