Energy Differences Between the Si and the Ge Dangling Bond Defects in a-Si1-xGex Alloys

Energy Differences Between the Si and the Ge Dangling Bond Defects in a-Si1-xGex Alloys

Research output: Contribution to conference › Paper

Original language	American English
Pages	583-588
Number of pages	6
State	Published - 1992
Event	Amorphous Silicon Technology - 1992: Materials Research Society Symposium - San Francisco, California Duration: 27 Apr 1992 → 1 May 1992

Conference

Conference	Amorphous Silicon Technology - 1992: Materials Research Society Symposium
City	San Francisco, California
Period	27/04/92 → 1/05/92

Bibliographical note

Work performed by North Carolina State University, Raleigh, North Carolina

NREL Publication Number

ACNR/CP-14605

Cite this

@conference{0c47b8407e6c4cee8939a7cbc16e1780,

title = "Energy Differences Between the Si and the Ge Dangling Bond Defects in a-Si1-xGex Alloys",

author = "NREL",

note = "Work performed by North Carolina State University, Raleigh, North Carolina; Amorphous Silicon Technology - 1992: Materials Research Society Symposium ; Conference date: 27-04-1992 Through 01-05-1992",

year = "1992",

language = "American English",

pages = "583--588",

}

TY - CONF

T1 - Energy Differences Between the Si and the Ge Dangling Bond Defects in a-Si1-xGex Alloys

AU - NREL, null

N1 - Work performed by North Carolina State University, Raleigh, North Carolina

PY - 1992

Y1 - 1992

M3 - Paper

SP - 583

EP - 588

T2 - Amorphous Silicon Technology - 1992: Materials Research Society Symposium

Y2 - 27 April 1992 through 1 May 1992

ER -