Engineered Nanostructured Passivated Contacts and Method of Making the Same

Pauls Stradins (Inventor), William Nemeth (Inventor), David Young (Inventor), Caroline de Souza (Inventor)

Research output: Patent


The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.
Original languageAmerican English
Patent number11,961,925 B2
Filing date16/04/24
StatePublished - 2024

NREL Publication Number

  • NREL/PT-5900-89657


  • dielectric layer
  • III-V alloy
  • plurality of conductive pathways


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