Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy

    Research output: Contribution to conferencePaper


    The 3-junction, GaInP2/GaAs/Ge solar cell is a non-optimized structure due to excess light falling on the Ge junction. Because of this, a fourth junction inserted between the GaAs and Ge subcells could use the excess light and provide an increase in device efficiency. Unfortunately, the leading candidate material, GaInNAs, suffers from very low minority-carrier diffusion lengths compared to itsparent compound, GaAs. These low diffusion lengths do not allow for the collection of adequate current to keep the overall 4-junction structure current matched. If the currents generated from the GaInNAs subcell are increased, the possibility exists for practical efficiencies of greater than 40% from this structure.
    Original languageAmerican English
    Number of pages5
    StatePublished - 2005
    Event2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado
    Duration: 25 Oct 200428 Oct 2004


    Conference2004 DOE Solar Energy Technologies Program Review Meeting
    CityDenver, Colorado

    Bibliographical note

    Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)

    NREL Publication Number

    • NREL/CP-520-37025


    • diffusion
    • internal quantum efficiency (IQE)
    • metal-organic chemical vapor deposition (MOCVD)
    • minority-carrier
    • molecular beam epitaxy (MBE)
    • PV
    • short circuit current (ISC)
    • solar cells


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