Abstract
GaInNAs, potentially useful in a 4-junction GaInP2/GaAs/GaInNAs/Ge solar cell, suffers from very low minority-carrier collection lengths. To date, the currents available from GaInNAs solar cells are not high enough to increase the efficiency of a 3-junction device by adding this fourth junction. Here, we grow p-i-n GaInNAs solar cells by molecular-beam epitaxy with wide, intrinsic base layers andinternal quantum efficiencies near 1.0. If similar 1.0-eV GaInNAs junctions can be successfully integrated into the 3-junction structure, the resulting 4-junction cell would have a higher efficiency.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2005 |
| Event | 31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida Duration: 3 Jan 2005 → 7 Jan 2005 |
Conference
| Conference | 31st IEEE Photovoltaics Specialists Conference and Exhibition |
|---|---|
| City | Lake Buena Vista, Florida |
| Period | 3/01/05 → 7/01/05 |
NREL Publication Number
- NREL/CP-520-37479
Keywords
- bandgap
- concentrator measurements
- enhanced depletion
- molecular beam epitaxy (MBE)
- open-circuit voltages
- PV
- quantum efficiency (QE)
- solar cells