Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy

Aaron J. Ptak; Daniel J. Friedman; Sarah Kurtz; James Kiehl

Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy

Aaron J. Ptak, Daniel J. Friedman, Sarah Kurtz, James Kiehl

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

41 Scopus Citations

Abstract

GaInNAs, potentially useful in a 4-junction GaInP ₂/GaAs/GaInNAs/ Ge solar cell, suffers from very low minority-carrier collection lengths. To date, the currents available from GaInNAs solar cells are not high enough to increase the efficiency of a 3-junction device by adding this fourth junction. Here, we grow p-i-n GaInNAs solar cells by MBE with wide, intrinsic base layers and internal QE's near 1.0. If similar 1.0-eV GaInNAs junctions can be successfully integrated into the 3-junction structure, the resulting 4-junction cell would have a higher efficiency.

Original language	American English
Pages	603-606
Number of pages	4
State	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 3 Jan 2005 → 7 Jan 2005

Conference

Conference	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	3/01/05 → 7/01/05

Bibliographical note

For preprint version see NREL/CP-520-37479

NREL Publication Number

NREL/CP-520-38887

Cite this

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title = "Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy",

abstract = "GaInNAs, potentially useful in a 4-junction GaInP 2/GaAs/GaInNAs/ Ge solar cell, suffers from very low minority-carrier collection lengths. To date, the currents available from GaInNAs solar cells are not high enough to increase the efficiency of a 3-junction device by adding this fourth junction. Here, we grow p-i-n GaInNAs solar cells by MBE with wide, intrinsic base layers and internal QE's near 1.0. If similar 1.0-eV GaInNAs junctions can be successfully integrated into the 3-junction structure, the resulting 4-junction cell would have a higher efficiency.",

author = "Ptak, {Aaron J.} and Friedman, {Daniel J.} and Sarah Kurtz and James Kiehl",

note = "For preprint version see NREL/CP-520-37479; 31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

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TY - CONF

T1 - Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy

AU - Ptak, Aaron J.

AU - Friedman, Daniel J.

AU - Kurtz, Sarah

AU - Kiehl, James

N1 - For preprint version see NREL/CP-520-37479

PY - 2005

Y1 - 2005

N2 - GaInNAs, potentially useful in a 4-junction GaInP 2/GaAs/GaInNAs/ Ge solar cell, suffers from very low minority-carrier collection lengths. To date, the currents available from GaInNAs solar cells are not high enough to increase the efficiency of a 3-junction device by adding this fourth junction. Here, we grow p-i-n GaInNAs solar cells by MBE with wide, intrinsic base layers and internal QE's near 1.0. If similar 1.0-eV GaInNAs junctions can be successfully integrated into the 3-junction structure, the resulting 4-junction cell would have a higher efficiency.

AB - GaInNAs, potentially useful in a 4-junction GaInP 2/GaAs/GaInNAs/ Ge solar cell, suffers from very low minority-carrier collection lengths. To date, the currents available from GaInNAs solar cells are not high enough to increase the efficiency of a 3-junction device by adding this fourth junction. Here, we grow p-i-n GaInNAs solar cells by MBE with wide, intrinsic base layers and internal QE's near 1.0. If similar 1.0-eV GaInNAs junctions can be successfully integrated into the 3-junction structure, the resulting 4-junction cell would have a higher efficiency.

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M3 - Paper

AN - SCOPUS:27944497488

SP - 603

EP - 606

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this