Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy

Research output: Contribution to conferencePaperpeer-review

41 Scopus Citations


GaInNAs, potentially useful in a 4-junction GaInP 2/GaAs/GaInNAs/ Ge solar cell, suffers from very low minority-carrier collection lengths. To date, the currents available from GaInNAs solar cells are not high enough to increase the efficiency of a 3-junction device by adding this fourth junction. Here, we grow p-i-n GaInNAs solar cells by MBE with wide, intrinsic base layers and internal QE's near 1.0. If similar 1.0-eV GaInNAs junctions can be successfully integrated into the 3-junction structure, the resulting 4-junction cell would have a higher efficiency.

Original languageAmerican English
Number of pages4
StatePublished - 2005
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 3 Jan 20057 Jan 2005


Conference31st IEEE Photovoltaic Specialists Conference - 2005
Country/TerritoryUnited States
CityLake Buena Vista, FL

Bibliographical note

For preprint version see NREL/CP-520-37479

NREL Publication Number

  • NREL/CP-520-38887


Dive into the research topics of 'Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy'. Together they form a unique fingerprint.

Cite this