Enhanced External Radiative Efficiency for 20.8% Efficient Single-Junction GaInP Solar Cells

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Abstract

We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80-90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction.

Original languageAmerican English
Article number041118
Number of pages5
JournalApplied Physics Letters
Volume103
Issue number4
DOIs
StatePublished - 22 Jul 2013

NREL Publication Number

  • NREL/JA-5200-59151

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