Abstract
Rapid thermal processing of precursor small-grained (less than or equal to 1 μm) CuInSe2 thin films can result in enhanced grain growth on the order of 100 μm under certain processing conditions. Crystal growth was accompanied by large increases (×10) in the X-ray diffraction intensity of the (112) peak, indicating near-perfect crystal growth in the [221] direction. Single-crystal quality was verified by selected-area electron channeling. However, at present, this effect occurs in conjuction with excessive void and pinhole formation between single-crystal platelets. These voids are often decorated with relatively selenium-deficient phases.
Original language | American English |
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Pages (from-to) | 47-52 |
Number of pages | 6 |
Journal | Solar Cells |
Volume | 30 |
Issue number | 1-4 |
DOIs | |
State | Published - 1991 |
NREL Publication Number
- ACNR/JA-212-12025