Enhanced Grain Growth in Polycrystalline CuInSe2 Using Rapid Thermal Processing

D. S. Albin, G. D. Mooney, A. Duda, J. Tuttle, R. Matson, R. Noufi

Research output: Contribution to journalArticlepeer-review

15 Scopus Citations


Rapid thermal processing of precursor small-grained (less than or equal to 1 μm) CuInSe2 thin films can result in enhanced grain growth on the order of 100 μm under certain processing conditions. Crystal growth was accompanied by large increases (×10) in the X-ray diffraction intensity of the (112) peak, indicating near-perfect crystal growth in the [221] direction. Single-crystal quality was verified by selected-area electron channeling. However, at present, this effect occurs in conjuction with excessive void and pinhole formation between single-crystal platelets. These voids are often decorated with relatively selenium-deficient phases.

Original languageAmerican English
Pages (from-to)47-52
Number of pages6
JournalSolar Cells
Issue number1-4
StatePublished - 1991

NREL Publication Number

  • ACNR/JA-212-12025


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