Abstract
Rapid thermal processing of precursor small-grained (less than or equal to 1 μm) CuInSe2 thin films can result in enhanced grain growth on the order of 100 μm under certain processing conditions. Crystal growth was accompanied by large increases (×10) in the X-ray diffraction intensity of the (112) peak, indicating near-perfect crystal growth in the [221] direction. Single-crystal quality was verified by selected-area electron channeling. However, at present, this effect occurs in conjuction with excessive void and pinhole formation between single-crystal platelets. These voids are often decorated with relatively selenium-deficient phases.
| Original language | American English |
|---|---|
| Pages (from-to) | 47-52 |
| Number of pages | 6 |
| Journal | Solar Cells |
| Volume | 30 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - 1991 |
NLR Publication Number
- ACNR/JA-212-12025