Enhanced Open-Circuit Voltage of Wide-Bandgap Perovskite Photovoltaics by Using Alloyed (FA1-xCsx)Pb(I1-xBrx)3 Quantum Dots

Mokshin Suri, Abhijit Hazarika, Bryon W. Larson, Qian Zhao, Marta Vallés-Pelarda, Timothy D. Siegler, Michael K. Abney, Andrew J. Ferguson, Brian A. Korgel, Joseph M. Luther

Research output: Contribution to journalArticlepeer-review

75 Scopus Citations

Abstract

We report a detailed study on APbX3 (A = formamidinium (FA+), Cs+ X = I-, Br-) perovskite quantum dots (PQDs) with combined A- and X-site alloying that exhibits both a wide bandgap and high open-circuit voltage (Voc) for the application of a potential top cell in tandem junction photovoltaic (PV) devices. The nanocrystal alloying affords control over the optical bandgap and is readily achieved by solution-phase cation and anion exchange between previously synthesized FAPbI3 and CsPbBr3 PQDs. Increasing only the Br- content of the PQDs widens the bandgap but results in shorter carrier lifetimes and associated Voc losses in devices. These deleterious effects can be mitigated by replacing Cs+ with FA+, resulting in wide-bandgap PQD absorbers with improved charge-carrier mobility and PVs with higher Voc.

Original languageAmerican English
Pages (from-to)1954-1960
Number of pages7
JournalACS Energy Letters
Volume4
Issue number8
DOIs
StatePublished - 9 Aug 2019

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.

NREL Publication Number

  • NREL/JA-5900-73572

Keywords

  • alloys
  • perovskite quantum dots
  • photovoltaic devices

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