Enhanced Performance in Cu(In,Ga)Se2 Solar Cells Fabricated by the Two-Step Selenization Process with a Potassium Fluoride Postdeposition Treatment

Lorelle Mansfield, Christopher Muzzillo, Clay DeHart, Bobby To, Joel Pankow, Kannan Ramanathan, Robert Reedy Jr., Rommel Noufi, Karen Bowers

Research output: Contribution to journalArticlepeer-review

54 Scopus Citations

Abstract

Cu(In,Ga)Se2 (CIGS) solar cells fabricated with two-step selenization processes commonly suffer from low open-circuit voltage (Voc). We found that the Voc of solar cells made from selenized Cu/Ga/In stacked metal precursors can be increased by employing a potassium fluoride (KF) postdeposition treatment (PDT). This study presents a comparison of films and resulting devices with and without the KF PDT. By including the KF PDT, an 18.6%-efficient CIGS device with a Voc of 0.709 V was fabricated using a two-step selenization process.

Original languageAmerican English
Article number6901217
Pages (from-to)1650-1654
Number of pages5
JournalIEEE Journal of Photovoltaics
Volume4
Issue number6
DOIs
StatePublished - 2014

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/JA-5K00-61188

Keywords

  • Copper compounds
  • Cu(In, Ga)Se2
  • current-voltage characteristics
  • photovoltaic cells
  • potassium fluoride postdeposition treatment
  • thin films

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