Abstract
Cu(In,Ga)Se2 (CIGS) solar cells fabricated with two-step selenization processes commonly suffer from low open-circuit voltage (Voc). We found that the Voc of solar cells made from selenized Cu/Ga/In stacked metal precursors can be increased by employing a potassium fluoride (KF) postdeposition treatment (PDT). This study presents a comparison of films and resulting devices with and without the KF PDT. By including the KF PDT, an 18.6%-efficient CIGS device with a Voc of 0.709 V was fabricated using a two-step selenization process.
Original language | American English |
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Article number | 6901217 |
Pages (from-to) | 1650-1654 |
Number of pages | 5 |
Journal | IEEE Journal of Photovoltaics |
Volume | 4 |
Issue number | 6 |
DOIs | |
State | Published - 2014 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.
NREL Publication Number
- NREL/JA-5K00-61188
Keywords
- Copper compounds
- Cu(In, Ga)Se2
- current-voltage characteristics
- photovoltaic cells
- potassium fluoride postdeposition treatment
- thin films