Enhanced Photoelectrochemical Responses of ZnO Films Through Ga and N Codoping

Kwang Soon Ahn; Yanfa Yan; Sudhakar Shet; Todd Deutsch; John Turner; Mowafak Al-Jassim

doi:10.1063/1.2822440

Enhanced Photoelectrochemical Responses of ZnO Films Through Ga and N Codoping

Kwang Soon Ahn, Yanfa Yan, Sudhakar Shet, Todd Deutsch, John Turner, Mowafak Al-Jassim

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

169 Scopus Citations

Abstract

We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 °C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

Original language	American English
Article number	Article No. 231909
Number of pages	3
Journal	Applied Physics Letters
Volume	91
Issue number	23
DOIs	https://doi.org/10.1063/1.2822440 https://doi.org/10.1063/1.2822440
State	Published - 2007

NREL Publication Number

NREL/JA-520-42349

Keywords

co-doping
co-sputtering
crystallinity
photoelectrochemical
ZnO

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title = "Enhanced Photoelectrochemical Responses of ZnO Films Through Ga and N Codoping",

abstract = "We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 °C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.",

keywords = "co-doping, co-sputtering, crystallinity, photoelectrochemical, ZnO",

author = "Ahn, {Kwang Soon} and Yanfa Yan and Sudhakar Shet and Todd Deutsch and John Turner and Mowafak Al-Jassim",

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journal = "Applied Physics Letters",

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T1 - Enhanced Photoelectrochemical Responses of ZnO Films Through Ga and N Codoping

AU - Ahn, Kwang Soon

AU - Yan, Yanfa

AU - Shet, Sudhakar

AU - Deutsch, Todd

AU - Turner, John

AU - Al-Jassim, Mowafak

PY - 2007

Y1 - 2007

N2 - We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 °C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

AB - We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 °C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

KW - co-doping

KW - co-sputtering

KW - crystallinity

KW - photoelectrochemical

KW - ZnO

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Enhanced Photoelectrochemical Responses of ZnO Films Through Ga and N Codoping

Abstract

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Keywords

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