Enhanced Photoelectrochemical Responses of ZnO Films Through Ga and N Codoping

Kwang Soon Ahn, Yanfa Yan, Sudhakar Shet, Todd Deutsch, John Turner, Mowafak Al-Jassim

Research output: Contribution to journalArticlepeer-review

166 Scopus Citations


We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 °C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

Original languageAmerican English
Article numberArticle No. 231909
Number of pages3
JournalApplied Physics Letters
Issue number23
StatePublished - 2007

NREL Publication Number

  • NREL/JA-520-42349


  • co-doping
  • co-sputtering
  • crystallinity
  • photoelectrochemical
  • ZnO


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