Enhanced Sb2Se3 Solar Cell Performance through Theory-Guided Defect Control

Xinsheng Liu, Xun Xiao, Ye Yang, Ding Jiang Xue, Deng Bing Li, Chao Chen, Shuaicheng Lu, Liang Gao, Yisu He, Matthew C. Beard, Gang Wang, Shiyou Chen, Jiang Tang

Research output: Contribution to journalArticlepeer-review

155 Scopus Citations

Abstract

Defects present in the absorber layer largely dictate photovoltaic device performance. Recently, a binary photovoltaic material, Sb2Se3, has drawn much attention due to its low-cost and nontoxic constituents and rapid performance promotion. So far, however, the intrinsic defects of Sb2Se3 remain elusive. Here, through a combined theoretical and experimental investigation, we revealed that shallow acceptors, SeSb antisites, are the dominant defects in Sb2Se3 produced in an Se-rich environment, where deep donors, SbSe and VSe, dominate in Sb2Se3 produced in an Se-poor environment. We further constructed a superstrate CdS/Sb2Se3 thin-film solar cell achieving 5.76% efficiency through in situ Se compensation during Sb2Se3 evaporation and through careful optimization of absorber layer thickness. The understanding of intrinsic defects in Sb2Se3 film and the demonstrated success of in situ Se compensation strategy pave the way for further efficiency improvement of this very promising photovoltaic technology.

Original languageAmerican English
Pages (from-to)861-870
Number of pages10
JournalProgress in Photovoltaics: Research and Applications
Volume25
Issue number10
DOIs
StatePublished - 2017

Bibliographical note

Publisher Copyright:
Copyright © 2017 John Wiley & Sons, Ltd.

NREL Publication Number

  • NREL/JA-5900-68725

Keywords

  • defects
  • in situ Se compensation
  • SbSe
  • solar cell
  • thermal evaporation

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