Enhanced Terahertz Emission of GaAs Microstructures

Kwangwook Park; Inhee Maeng; Gyu-Seok Lee; Chul Kang; Gun-Wu Ju; Yong-Tak Lee; Chul-Sik Kee; Seoung-Bum Son

doi:10.1109/IRMMW-THz.2018.8509970

Enhanced Terahertz Emission of GaAs Microstructures

Kwangwook Park, Inhee Maeng, Gyu-Seok Lee, Chul Kang, Gun-Wu Ju, Yong-Tak Lee, Chul-Sik Kee, Seoung-Bum Son

Materials Science

Gwangju Institute of Science & Technology

Research output: Contribution to conference › Paper

Abstract

We observed the enhancement of terahertz radiation emitted from GaAs microstructures under wavelength tuned optical excitation. GaAs microstructure thin films were prepared by molecular beam epitaxy method. The peak amplitude of terahertz radiation from GaAs microstructure is more than eight times that from semi-insulating GaAs.

Original language	American English
Number of pages	2
DOIs	https://doi.org/10.1109/IRMMW-THz.2018.8509970
State	Published - 2018
Event	2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Nagoya, Japan Duration: 9 Sep 2018 → 14 Sep 2018

Conference

Conference	2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
City	Nagoya, Japan
Period	9/09/18 → 14/09/18

NREL Publication Number

NREL/CP-5K00-72938

Keywords

crystals
gallium arsenide
microstructure
photonic band gap
surface emitting lasers
terahertz radiation
ultrafast optics

Access to Document

10.1109/IRMMW-THz.2018.8509970

Cite this

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title = "Enhanced Terahertz Emission of GaAs Microstructures",

abstract = "We observed the enhancement of terahertz radiation emitted from GaAs microstructures under wavelength tuned optical excitation. GaAs microstructure thin films were prepared by molecular beam epitaxy method. The peak amplitude of terahertz radiation from GaAs microstructure is more than eight times that from semi-insulating GaAs.",

keywords = "crystals, gallium arsenide, microstructure, photonic band gap, surface emitting lasers, terahertz radiation, ultrafast optics",

author = "Kwangwook Park and Inhee Maeng and Gyu-Seok Lee and Chul Kang and Gun-Wu Ju and Yong-Tak Lee and Chul-Sik Kee and Seoung-Bum Son",

year = "2018",

doi = "10.1109/IRMMW-THz.2018.8509970",

language = "American English",

note = "2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) ; Conference date: 09-09-2018 Through 14-09-2018",

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TY - CONF

T1 - Enhanced Terahertz Emission of GaAs Microstructures

AU - Park, Kwangwook

AU - Maeng, Inhee

AU - Lee, Gyu-Seok

AU - Kang, Chul

AU - Ju, Gun-Wu

AU - Lee, Yong-Tak

AU - Kee, Chul-Sik

AU - Son, Seoung-Bum

PY - 2018

Y1 - 2018

N2 - We observed the enhancement of terahertz radiation emitted from GaAs microstructures under wavelength tuned optical excitation. GaAs microstructure thin films were prepared by molecular beam epitaxy method. The peak amplitude of terahertz radiation from GaAs microstructure is more than eight times that from semi-insulating GaAs.

AB - We observed the enhancement of terahertz radiation emitted from GaAs microstructures under wavelength tuned optical excitation. GaAs microstructure thin films were prepared by molecular beam epitaxy method. The peak amplitude of terahertz radiation from GaAs microstructure is more than eight times that from semi-insulating GaAs.

KW - crystals

KW - gallium arsenide

KW - microstructure

KW - photonic band gap

KW - surface emitting lasers

KW - terahertz radiation

KW - ultrafast optics

U2 - 10.1109/IRMMW-THz.2018.8509970

DO - 10.1109/IRMMW-THz.2018.8509970

M3 - Paper

T2 - 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Y2 - 9 September 2018 through 14 September 2018

ER -

Enhanced Terahertz Emission of GaAs Microstructures

Abstract

Conference

NREL Publication Number

Keywords

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Cite this