Enhancement of Photoelectrochemical Response by Aligned Nanorods in ZnO Thin Films

Kwang Soon Ahn, Sudhakar Shet, Todd Deutsch, Chun Sheng Jiang, Yanfa Yan, Mowafak Al-Jassim, John Turner

Research output: Contribution to journalArticlepeer-review

127 Scopus Citations


ZnO thin films are deposited in pure Ar and mixed Ar and N2 gas ambient at various substrate temperatures by rf sputtering ZnO targets. We find that the deposition in pure Ar ambient leads to polycrystalline ZnO thin films. However, the presence of N2 in the deposition ambient promotes the formation of aligned nanorods at temperatures above 300 °C. ZnO films with aligned nanorods deposited at 500 °C exhibit significantly enhanced photoelectrochemical response, compared to polycrystalline ZnO thin films grown at the same temperature. Our results suggest that aligned nanostructures may offer potential advantages for improving the efficiency of photoelectrochemical water-splitting for H2 production.

Original languageAmerican English
Pages (from-to)387-392
Number of pages6
JournalJournal of Power Sources
Issue number1
StatePublished - 2008

NREL Publication Number

  • NREL/JA-520-41910


  • Bandgap
  • Crystallinity
  • Gas ambient
  • Photoelectrochemical
  • Sputter
  • ZnO nanorod


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