Enhancing Interfacial Charge Transfer in a WO3/BiVO4 Photoanode Heterojunction through Gallium and Tungsten Co-Doping and a Sulfur Modified Bi2O3 Interfacial Layer

Umesh Prasad, James Young, Justin Johnson, Deborah McGott, Hengfei Gu, Eric Garfunkel, Arunachala Kannan

Research output: Contribution to journalArticlepeer-review

26 Scopus Citations

Abstract

Photoanodes containing a WO3/BiVO4heterojunction have demonstrated promising photoelectrochemical water splitting performance, but the ability to effectively passivate the WO3/BiVO4interface has limited charge transport and collection. Here, the WO3/BiVO4interface is passivated with a sulfur-modified Bi2O3interfacial layer with a staggered band edge alignment to facilitate charge transfer and lifetime. Additionally, BiVO4was co-doped with Ga3+at Bi3+sites and W6+at V5+sites (i.e., (Ga,W):BiVO4) to improve the light absorption and photogenerated charge carrier concentration. The optimized WO3/S:Bi2O3/(Ga,W):BiVO4photoanode exhibited a photocurrent density of 4.0 ± 0.2 mA cm−2compared to WO3/(Ga,W):BiVO4with 2.8 ± 0.12 mA cm−2at 1.23 VRHEin K2HPO4under simulated AM 1.5G illumination. Time-resolved photoluminescence spectroscopic analysis of the WO3/S:Bi2O3/(Ga,W):BiVO4electrode validated the enhanced interfacial charge transfer kinetics. Inoperandofemto- and nano-second transient absorption spectroscopy confirmed the presence of long-lived photogenerated charge carriers and revealed lower recombination initially due to rapid charge separation of WO3/S:Bi2O3/(Ga,W):BiVO4. The distribution and role of sulfur was further investigated using EDAX, XPS and TOF-SIMS depth profiling. Finally, a Co-Pi co-catalyst layer was added to achieve a photocurrent of 5.1 ± 0.25 mA cm−2and corresponding H2generation rate of 67.3 μmol h−1cm−2for the WO3/S:Bi2O3/(Ga,W):BiVO4/Co-Pi photoanode.

Original languageAmerican English
Pages (from-to)16137-16149
Number of pages13
JournalJournal of Materials Chemistry A
Volume9
Issue number29
DOIs
StatePublished - 7 Aug 2021

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2021.

NREL Publication Number

  • NREL/JA-5900-79256

Keywords

  • BiVO4
  • photoelectrochemical
  • solar-photochemistry
  • water splitting

Fingerprint

Dive into the research topics of 'Enhancing Interfacial Charge Transfer in a WO3/BiVO4 Photoanode Heterojunction through Gallium and Tungsten Co-Doping and a Sulfur Modified Bi2O3 Interfacial Layer'. Together they form a unique fingerprint.

Cite this