Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices

Vincenzo LaSalvia; Abigail Meyer; William Nemeth; David Young; Matthew Page; Pauls Stradins

doi:10.1109/PVSC40753.2019.8980680

Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices

Vincenzo LaSalvia, Abigail Meyer, William Nemeth, David Young, Matthew Page, Pauls Stradins

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

Abstract

We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N₂ environment. This enhancement is exhibited in a 1-sun iV_OC of 735 mV when annealed in O₂ rather than 708 mV in N₂.

Original language	American English
Pages	311-313
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980680 https://doi.org/10.1109/PVSC40753.2019.8980680
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5900-73171

Keywords

Czochralski
intrinsic point defects
monocrystalline silicon
passivation
photocarrier lifetime
thermal processing

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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LaSalvia, V., Meyer, A., Nemeth, W., Young, D., Page, M., & Stradins, P. (2019). Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices. 311-313. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.8980680, https://doi.org/10.1109/PVSC40753.2019.8980680

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abstract = "We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N2 environment. This enhancement is exhibited in a 1-sun iVOC of 735 mV when annealed in O2 rather than 708 mV in N2.",

keywords = "Czochralski, intrinsic point defects, monocrystalline silicon, passivation, photocarrier lifetime, thermal processing",

author = "Vincenzo LaSalvia and Abigail Meyer and William Nemeth and David Young and Matthew Page and Pauls Stradins",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

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doi = "10.1109/PVSC40753.2019.8980680",

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LaSalvia, V, Meyer, A, Nemeth, W , Young, D , Page, M & Stradins, P 2019, 'Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 311-313. https://doi.org/10.1109/PVSC40753.2019.8980680, https://doi.org/10.1109/PVSC40753.2019.8980680

Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices. / LaSalvia, Vincenzo; Meyer, Abigail; Nemeth, William et al.
2019. 311-313 Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States.

Research output: Contribution to conference › Paper › peer-review

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T1 - Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices

AU - LaSalvia, Vincenzo

AU - Meyer, Abigail

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AU - Young, David

AU - Page, Matthew

AU - Stradins, Pauls

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N2 - We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N2 environment. This enhancement is exhibited in a 1-sun iVOC of 735 mV when annealed in O2 rather than 708 mV in N2.

AB - We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N2 environment. This enhancement is exhibited in a 1-sun iVOC of 735 mV when annealed in O2 rather than 708 mV in N2.

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KW - intrinsic point defects

KW - monocrystalline silicon

KW - passivation

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KW - thermal processing

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T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

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ER -

Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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