Epitaxial (AlxGa1-x-yIny)2O3 Alloys Lattice Matched to Monoclinic Ga2O3 Substrates: Article No. 172106

Engineering

• Monoclinic 100%
• Band Gap 100%
• Dielectrics 50%
• Growth Condition 50%
• Band Offset 50%
• Absorption Edge 50%
• Identify Area 50%
• Mole Fraction 50%
• Thick Layer 50%
• Phase Separation 50%
• Charge Density 50%
• Phase Composition 50%
• Lattice Constant 50%
• Lattice Parameter 50%
• Conduction Band 50%

Material Science

• Film 100%
• Lattice Constant 50%
• Density 50%
• Electrical Resistivity 50%
• Molecular Beam Epitaxy 50%
• Transistor 50%
• Band Offset 50%
• Scanning Transmission Electron Microscopy 50%
• Desorption 50%
• Dielectric Material 50%
• Phase Composition 50%