Epitaxial Cu2ZnSnS4 Thin Film on Si (111) 4 degree Substrate

Ning Song; Matthew Young; Fangyang Liu; Pete Erslev; Samual Wilson; Steven P. Harvey; Glenn Teeter; Yidan Huang; Xiaojing Hao; Martin A. Green

doi:10.1063/1.4922992

Epitaxial Cu2ZnSnS4 Thin Film on Si (111) 4 degree Substrate

Ning Song, Matthew Young, Fangyang Liu, Pete Erslev, Samual Wilson, Steven P. Harvey, Glenn Teeter, Yidan Huang, Xiaojing Hao, Martin A. Green

Research output: Contribution to journal › Article › peer-review

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Abstract

To explore the possibility of Cu₂ZnSnS₄ (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu₂ZnSnS₄ thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.

Original language	American English
Article number	252102
Number of pages	5
Journal	Applied Physics Letters
Volume	106
Issue number	25
DOIs	https://doi.org/10.1063/1.4922992 https://doi.org/10.1063/1.4922992
State	Published - 22 Jun 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NREL Publication Number

NREL/JA-5K00-64513

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title = "Epitaxial Cu2ZnSnS4 Thin Film on Si (111) 4 degree Substrate",

abstract = "To explore the possibility of Cu2ZnSnS4 (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu2ZnSnS4 thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.",

author = "Ning Song and Matthew Young and Fangyang Liu and Pete Erslev and Samual Wilson and Harvey, {Steven P.} and Glenn Teeter and Yidan Huang and Xiaojing Hao and Green, {Martin A.}",

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language = "American English",

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T1 - Epitaxial Cu2ZnSnS4 Thin Film on Si (111) 4 degree Substrate

AU - Song, Ning

AU - Young, Matthew

AU - Liu, Fangyang

AU - Erslev, Pete

AU - Wilson, Samual

AU - Harvey, Steven P.

AU - Teeter, Glenn

AU - Huang, Yidan

AU - Hao, Xiaojing

AU - Green, Martin A.

PY - 2015/6/22

Y1 - 2015/6/22

N2 - To explore the possibility of Cu2ZnSnS4 (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu2ZnSnS4 thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.

AB - To explore the possibility of Cu2ZnSnS4 (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu2ZnSnS4 thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.

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ER -

Epitaxial Cu2ZnSnS4 Thin Film on Si (111) 4 degree Substrate

Abstract

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UN SDGs

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