Epitaxial Dirac Semimetal Vertical Heterostructures for Advanced Device Architectures

Anthony Rice, Choong Hee Lee, Brian Fluegel, Andrew Norman, Jocienne Nelson, Chun Sheng Jiang, Mark Steger, Deborah McGott, Patrick Walker, Kirstin Alberi

Research output: Contribution to journalArticlepeer-review

12 Scopus Citations


Exploiting the extraordinary transport and optical properties of 3D topological semimetals for device applications requires epitaxial integration with semiconductors to carefully control carrier transport, yet no studies have established heteroepitaxy on top of any topological semimetals to date. Here, a novel approach toward fabricating heterostructures is demonstrated by epitaxially incorporating the Dirac semimetal Cd3As2 between ZnxCd1-xTe and CdTe layers via molecular beam epitaxy on GaAs (001) substrates. The approach utilizes the higher energy (001) surface of Cd3As2 to stabilize 2D epitaxy of zinc blende semiconductors. To demonstrate the impact heterostructure formation offers to device performance, an all-epitaxial, barrier-type vertical photodetector is fabricated that accesses a different carrier separation mechanism than previously reported non-epitaxial junctions and consequently exhibits significantly reduced dark currents. The results highlight the important role that epitaxial integration can play in accessing advanced architectures for topological semimetal-based devices.

Original languageAmerican English
Article number2111470
Number of pages7
JournalAdvanced Functional Materials
Issue number21
StatePublished - 2022

Bibliographical note

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

NREL Publication Number

  • NREL/JA-5K00-81744


  • heteroepitaxy
  • photodetector
  • topological semimetal


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