Epitaxial Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750<degrees>C

Kirstin Alberi, Ina T. Martin, Maxim Shub, Charles W. Teplin, Eugene Iwaniczko, Yueqin Xu, Anna Duda, Paul Stradins, Steve W. Johnston, Manuel J. Romero, Howard M. Branz, David L. Young

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations

Abstract

We report the fabrication of film c-Si solar cells on Si wafer templates by hot wire chemical vapor deposition. These devices, grown at glass-compatible temperatures below 750° C, demonstrate open-circuit voltages greater than 500 mV and efficiencies above 5%. Analysis of the device characteristics and quantum efficiency provides important information about the epitaxial c-Si absorber material quality as a function of growth temperature.

Original languageAmerican English
Pages1355-1357
Number of pages3
DOIs
StatePublished - 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 7 Jun 200912 Jun 2009

Conference

Conference2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA
Period7/06/0912/06/09

Bibliographical note

For preprint version, see NREL/CP-520-45965

NREL Publication Number

  • NREL/CP-520-45463

Keywords

  • materials science
  • solar cells

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