Abstract
We report the fabrication of film c-Si solar cells on Si wafer templates by hot wire chemical vapor deposition. These devices, grown at glass-compatible temperatures below 750° C, demonstrate open-circuit voltages greater than 500 mV and efficiencies above 5%. Analysis of the device characteristics and quantum efficiency provides important information about the epitaxial c-Si absorber material quality as a function of growth temperature.
Original language | American English |
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Pages | 1355-1357 |
Number of pages | 3 |
DOIs | |
State | Published - 2009 |
Event | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009 |
Conference
Conference | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
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Country/Territory | United States |
City | Philadelphia, PA |
Period | 7/06/09 → 12/06/09 |
Bibliographical note
For preprint version, see NREL/CP-520-45965NREL Publication Number
- NREL/CP-520-45463
Keywords
- materials science
- solar cells