Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs(100) Fabricated by Molecular Beam Epitaxy

Research output: Contribution to conference › Paper

Original language	American English
Pages	599-603
Number of pages	5
State	Published - 1994
Event	Compound Semiconductor Epitaxy: Materials Research Society Symposium - San Francisco, California Duration: 4 Apr 1994 → 7 Apr 1994

Conference	Compound Semiconductor Epitaxy: Materials Research Society Symposium
City	San Francisco, California
Period	4/04/94 → 7/04/94

NLR Publication Number

@conference{1a7e7437d6504533a338d9c729d00993,

title = "Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs(100) Fabricated by Molecular Beam Epitaxy",

author = "NREL",

year = "1994",

language = "American English",

pages = "599--603",

note = "Compound Semiconductor Epitaxy: Materials Research Society Symposium ; Conference date: 04-04-1994 Through 07-04-1994",

}