Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

Research output: Contribution to conference › Paper

Abstract

Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.

Original language	American English
Number of pages	4
State	Published - 2001
Event	NCPV Program Review Meeting - Lakewood, Colorado Duration: 14 Oct 2001 → 17 Oct 2001

@conference{8158ae1c2df142778b58eeccc1aeab46,

title = "Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint",

abstract = "Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.",

keywords = "epitaxial growth, III-V, NCPV, photovoltaics (PV)",

author = "NREL",

year = "2001",

language = "American English",

note = "NCPV Program Review Meeting ; Conference date: 14-10-2001 Through 17-10-2001",

}

TY - CONF

T1 - Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

AU - NREL, null

PY - 2001

Y1 - 2001

N2 - Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.

AB - Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.

KW - epitaxial growth

KW - III-V

KW - NCPV

KW - photovoltaics (PV)

M3 - Paper

T2 - NCPV Program Review Meeting

Y2 - 14 October 2001 through 17 October 2001

ER -