Epitaxial Growth of CZTS on Si Substrates Investigated with Electron Backscatter Diffraction

Helio Moutinho; Matthew Young; Steven Harvey; Chun Sheng Jiang; Craig Perkins; Mowafak Al-Jassim; Ingrid Repins; Glenn Teeter

doi:10.1109/PVSC.2014.6925405

Epitaxial Growth of CZTS on Si Substrates Investigated with Electron Backscatter Diffraction

Helio Moutinho, Matthew Young, Steven Harvey, Chun Sheng Jiang, Craig Perkins, Mowafak Al-Jassim, Ingrid Repins, Glenn Teeter

Materials Science

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

The objective of this work is to develop procedures for growing high-quality epitaxial Cu₂ZnSnS₄ thin films. We deposited our films by molecular beam epitaxy, with different growth parameters, on [100]- and [111]-oriented Si substrates. To study the growth of the films, we used electron backscatter diffraction. We found that, under the right conditions, we were able to grow epitaxial [111]-oriented CZTS films that had a common characteristic: the existence of two domains, both with the same orientation, but rotated by 60° between each other. In this paper, we investigate the reliability of the EBSD analysis to study different domains in CZTS films, and correlate the film growth with deposition parameters, attempting to gain insight on the characteristics of the boundaries between the two domains.

Original language	American English
Pages	2379-2383
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2014.6925405 https://doi.org/10.1109/PVSC.2014.6925405
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5K00-61239

Keywords

CZTS
EBSD
epitaxial growth

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Moutinho, H., Young, M., Harvey, S., Jiang, C. S., Perkins, C., Al-Jassim, M., Repins, I., & Teeter, G. (2014). Epitaxial Growth of CZTS on Si Substrates Investigated with Electron Backscatter Diffraction. 2379-2383. Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States. https://doi.org/10.1109/PVSC.2014.6925405, https://doi.org/10.1109/PVSC.2014.6925405

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title = "Epitaxial Growth of CZTS on Si Substrates Investigated with Electron Backscatter Diffraction",

abstract = "The objective of this work is to develop procedures for growing high-quality epitaxial Cu2ZnSnS4 thin films. We deposited our films by molecular beam epitaxy, with different growth parameters, on [100]- and [111]-oriented Si substrates. To study the growth of the films, we used electron backscatter diffraction. We found that, under the right conditions, we were able to grow epitaxial [111]-oriented CZTS films that had a common characteristic: the existence of two domains, both with the same orientation, but rotated by 60° between each other. In this paper, we investigate the reliability of the EBSD analysis to study different domains in CZTS films, and correlate the film growth with deposition parameters, attempting to gain insight on the characteristics of the boundaries between the two domains.",

keywords = "CZTS, EBSD, epitaxial growth",

author = "Helio Moutinho and Matthew Young and Steven Harvey and Jiang, {Chun Sheng} and Craig Perkins and Mowafak Al-Jassim and Ingrid Repins and Glenn Teeter",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

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doi = "10.1109/PVSC.2014.6925405",

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Moutinho, H, Young, M , Harvey, S , Jiang, CS , Perkins, C , Al-Jassim, M , Repins, I & Teeter, G 2014, 'Epitaxial Growth of CZTS on Si Substrates Investigated with Electron Backscatter Diffraction', Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 2379-2383. https://doi.org/10.1109/PVSC.2014.6925405, https://doi.org/10.1109/PVSC.2014.6925405

TY - CONF

T1 - Epitaxial Growth of CZTS on Si Substrates Investigated with Electron Backscatter Diffraction

AU - Moutinho, Helio

AU - Young, Matthew

AU - Harvey, Steven

AU - Jiang, Chun Sheng

AU - Perkins, Craig

AU - Al-Jassim, Mowafak

AU - Repins, Ingrid

AU - Teeter, Glenn

PY - 2014/10/15

Y1 - 2014/10/15

N2 - The objective of this work is to develop procedures for growing high-quality epitaxial Cu2ZnSnS4 thin films. We deposited our films by molecular beam epitaxy, with different growth parameters, on [100]- and [111]-oriented Si substrates. To study the growth of the films, we used electron backscatter diffraction. We found that, under the right conditions, we were able to grow epitaxial [111]-oriented CZTS films that had a common characteristic: the existence of two domains, both with the same orientation, but rotated by 60° between each other. In this paper, we investigate the reliability of the EBSD analysis to study different domains in CZTS films, and correlate the film growth with deposition parameters, attempting to gain insight on the characteristics of the boundaries between the two domains.

AB - The objective of this work is to develop procedures for growing high-quality epitaxial Cu2ZnSnS4 thin films. We deposited our films by molecular beam epitaxy, with different growth parameters, on [100]- and [111]-oriented Si substrates. To study the growth of the films, we used electron backscatter diffraction. We found that, under the right conditions, we were able to grow epitaxial [111]-oriented CZTS films that had a common characteristic: the existence of two domains, both with the same orientation, but rotated by 60° between each other. In this paper, we investigate the reliability of the EBSD analysis to study different domains in CZTS films, and correlate the film growth with deposition parameters, attempting to gain insight on the characteristics of the boundaries between the two domains.

KW - CZTS

KW - EBSD

KW - epitaxial growth

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DO - 10.1109/PVSC.2014.6925405

M3 - Paper

AN - SCOPUS:84912090724

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EP - 2383

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Epitaxial Growth of CZTS on Si Substrates Investigated with Electron Backscatter Diffraction

Abstract

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Keywords

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