Epitaxial Growth of InGaAs on MgAl2O4 Spinel for One-Sun Photovoltaics

W. L. Rance; A. G. Norman; A. J. Ptak

doi:10.1016/j.jcrysgro.2012.09.037

Epitaxial Growth of InGaAs on MgAl2O4 Spinel for One-Sun Photovoltaics

W. L. Rance, A. G. Norman, A. J. Ptak

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

We demonstrate coincident-site lattice-matched growth of InGaAs layers on (001) MgAl₂O₄ spinel substrates, using a 45° rotation between the lattices, by molecular beam epitaxy. This is the first step towards easily removable multijunction solar cells with inert, reusable substrates. High-resolution cross-sectional transmission electron microscopy (TEM) measurements indicate that microtwins originate at the InGaAs/spinel interface, but tend to annihilate leaving the upper parts of layers relatively twin-free. Plan-view TEM indicates a high density of threading dislocations. InGaAs layers grown at elevated temperatures show improved transport properties, with majority-carrier mobilities approaching typical values for homoepitaxial GaAs on GaAs substrates. Simple p-i-n junctions show photovoltaic efficiencies above 1%.

Original language	American English
Pages (from-to)	40-43
Number of pages	4
Journal	Journal of Crystal Growth
Volume	363
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.09.037 https://doi.org/10.1016/j.jcrysgro.2012.09.037
State	Published - 2013

NREL Publication Number

NREL/JA-5200-56681

Keywords

A1. Planar defects
A1. Substrates
A3. Molecular beam epitaxy
B2. Semiconducting III-V materials
B3. Solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

Cite this

@article{b12b2134c3d246b0b004c69fd46fee70,

title = "Epitaxial Growth of InGaAs on MgAl2O4 Spinel for One-Sun Photovoltaics",

abstract = "We demonstrate coincident-site lattice-matched growth of InGaAs layers on (001) MgAl2O4 spinel substrates, using a 45° rotation between the lattices, by molecular beam epitaxy. This is the first step towards easily removable multijunction solar cells with inert, reusable substrates. High-resolution cross-sectional transmission electron microscopy (TEM) measurements indicate that microtwins originate at the InGaAs/spinel interface, but tend to annihilate leaving the upper parts of layers relatively twin-free. Plan-view TEM indicates a high density of threading dislocations. InGaAs layers grown at elevated temperatures show improved transport properties, with majority-carrier mobilities approaching typical values for homoepitaxial GaAs on GaAs substrates. Simple p-i-n junctions show photovoltaic efficiencies above 1%.",

keywords = "A1. Planar defects, A1. Substrates, A3. Molecular beam epitaxy, B2. Semiconducting III-V materials, B3. Solar cells",

author = "Rance, {W. L.} and Norman, {A. G.} and Ptak, {A. J.}",

year = "2013",

doi = "10.1016/j.jcrysgro.2012.09.037",

language = "American English",

volume = "363",

pages = "40--43",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Epitaxial Growth of InGaAs on MgAl2O4 Spinel for One-Sun Photovoltaics

AU - Rance, W. L.

AU - Norman, A. G.

AU - Ptak, A. J.

PY - 2013

Y1 - 2013

N2 - We demonstrate coincident-site lattice-matched growth of InGaAs layers on (001) MgAl2O4 spinel substrates, using a 45° rotation between the lattices, by molecular beam epitaxy. This is the first step towards easily removable multijunction solar cells with inert, reusable substrates. High-resolution cross-sectional transmission electron microscopy (TEM) measurements indicate that microtwins originate at the InGaAs/spinel interface, but tend to annihilate leaving the upper parts of layers relatively twin-free. Plan-view TEM indicates a high density of threading dislocations. InGaAs layers grown at elevated temperatures show improved transport properties, with majority-carrier mobilities approaching typical values for homoepitaxial GaAs on GaAs substrates. Simple p-i-n junctions show photovoltaic efficiencies above 1%.

AB - We demonstrate coincident-site lattice-matched growth of InGaAs layers on (001) MgAl2O4 spinel substrates, using a 45° rotation between the lattices, by molecular beam epitaxy. This is the first step towards easily removable multijunction solar cells with inert, reusable substrates. High-resolution cross-sectional transmission electron microscopy (TEM) measurements indicate that microtwins originate at the InGaAs/spinel interface, but tend to annihilate leaving the upper parts of layers relatively twin-free. Plan-view TEM indicates a high density of threading dislocations. InGaAs layers grown at elevated temperatures show improved transport properties, with majority-carrier mobilities approaching typical values for homoepitaxial GaAs on GaAs substrates. Simple p-i-n junctions show photovoltaic efficiencies above 1%.

KW - A1. Planar defects

KW - A1. Substrates

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting III-V materials

KW - B3. Solar cells

UR - http://www.scopus.com/inward/record.url?scp=84888346293&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2012.09.037

DO - 10.1016/j.jcrysgro.2012.09.037

M3 - Article

AN - SCOPUS:84888346293

SN - 0022-0248

VL - 363

SP - 40

EP - 43

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Epitaxial Growth of InGaAs on MgAl2O4 Spinel for One-Sun Photovoltaics

Abstract

NREL Publication Number

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this