Epitaxial Growth of InGaAs on MgAl2O4 Spinel for One-Sun Photovoltaics

W. L. Rance, A. G. Norman, A. J. Ptak

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1 Scopus Citations


We demonstrate coincident-site lattice-matched growth of InGaAs layers on (001) MgAl2O4 spinel substrates, using a 45° rotation between the lattices, by molecular beam epitaxy. This is the first step towards easily removable multijunction solar cells with inert, reusable substrates. High-resolution cross-sectional transmission electron microscopy (TEM) measurements indicate that microtwins originate at the InGaAs/spinel interface, but tend to annihilate leaving the upper parts of layers relatively twin-free. Plan-view TEM indicates a high density of threading dislocations. InGaAs layers grown at elevated temperatures show improved transport properties, with majority-carrier mobilities approaching typical values for homoepitaxial GaAs on GaAs substrates. Simple p-i-n junctions show photovoltaic efficiencies above 1%.

Original languageAmerican English
Pages (from-to)40-43
Number of pages4
JournalJournal of Crystal Growth
StatePublished - 2013

NREL Publication Number

  • NREL/JA-5200-56681


  • A1. Planar defects
  • A1. Substrates
  • A3. Molecular beam epitaxy
  • B2. Semiconducting III-V materials
  • B3. Solar cells


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