Epitaxial Growth of Silicon for Layer Transfer

NREL (Inventor)

    Research output: Patent


    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.
    Original languageAmerican English
    Patent number8,987,115 B2
    Filing date24/03/15
    StatePublished - 2015

    NREL Publication Number

    • NREL/PT-5J00-65233


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