Epitaxial Integration of Dirac Semimetals with Si(001)

Research output: Contribution to journalArticlepeer-review

Abstract

Topological semimetals contain novel combinations of properties that make them useful in a variety of applications, including optoelectronics, spintronics and low energy computing, and catalysis. Although they have been grown with high quality as bulk single crystals, incorporation with semiconductor substrates will ultimately be required to maximize their technological reach. Here, epitaxial growth of the Dirac semimetal Cd (Formula presented.) As (Formula presented.) on Si(001) is demonstrated through two routes. First, Cd (Formula presented.) As (Formula presented.) (112) epilayers are grown on Si(001) via an intermediate CdTe(111) buffer layer. Second, Cd (Formula presented.) As (Formula presented.) (112) is grown directly on Si(001). This work sets the foundation for integration of novel semimetal materials with existing CMOS technology.

Original languageAmerican English
Article number578
Number of pages9
JournalCrystals
Volume13
Issue number4
DOIs
StatePublished - 2023

Bibliographical note

Publisher Copyright:
© 2023 by the authors.

NREL Publication Number

  • NREL/JA-5K00-85744

Keywords

  • molecular beam epitaxy
  • silicon
  • thin films
  • topological semimetals

Fingerprint

Dive into the research topics of 'Epitaxial Integration of Dirac Semimetals with Si(001)'. Together they form a unique fingerprint.

Cite this