Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint

Research output: Contribution to conferencePaper

Abstract

We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures < 750..deg..C, demonstrate open-circuit voltages > 500 mV and efficiencies > 5%.
Original languageAmerican English
Number of pages6
StatePublished - 2009
Event34th IEEE Photovoltaic Specialists Conferece - Philadelphia, Pennsylvania
Duration: 7 Jun 200912 Jun 2009

Conference

Conference34th IEEE Photovoltaic Specialists Conferece
CityPhiladelphia, Pennsylvania
Period7/06/0912/06/09

NREL Publication Number

  • NREL/CP-520-45965

Keywords

  • devices
  • epitaxial absorber
  • fabrication
  • growth temperature
  • hot-wire chemical vapor deposition (HWCVD)
  • materials quality
  • polycrystalline silicon
  • PV
  • solar cells
  • thin films

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