Abstract
We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures < 750..deg..C, demonstrate open-circuit voltages > 500 mV and efficiencies > 5%.
| Original language | American English |
|---|---|
| Number of pages | 6 |
| State | Published - 2009 |
| Event | 34th IEEE Photovoltaic Specialists Conferece - Philadelphia, Pennsylvania Duration: 7 Jun 2009 → 12 Jun 2009 |
Conference
| Conference | 34th IEEE Photovoltaic Specialists Conferece |
|---|---|
| City | Philadelphia, Pennsylvania |
| Period | 7/06/09 → 12/06/09 |
NLR Publication Number
- NREL/CP-520-45965
Keywords
- devices
- epitaxial absorber
- fabrication
- growth temperature
- hot-wire chemical vapor deposition (HWCVD)
- materials quality
- polycrystalline silicon
- PV
- solar cells
- thin films